Inside the systemMultimodule MOCVD (2″) · Penn State
Rotating substrate holder
2inch
Maximum substrate temperature
1,000°C
Chamber operating range
10–700Torr
Precursor bubbler manifolds
6
Capabilities
From deposition to characterization.
A connected setup for growing thin films and examining their optical properties.
Grow the film.
A cold-wall reactor with a rotating, resistively heated substrate holder. Six bubbler manifolds supply liquid or solid precursors, with recipe-driven control and data logging.
Follow the growth.
In-situ spectroscopic ellipsometry monitors the film during deposition. Measurements can be compared with the recorded growth conditions.
Connect to characterization.
Robotic high-vacuum transfer connects the growth chamber to a glovebox with WITec Raman and photoluminescence spectroscopy.
Documented process capabilities
Three chalcogenides. A two-inch platform.
Monolayer growth on 2-inch c-plane sapphire, as listed by the Penn State facility.
